Job Description
Description: Terafab is building a vertically integrated semiconductor factory at an unprecedented scale. The facility brings logic, memory, packaging, test, and lithography mask production under one roof, optimized for rapid iteration and maximum compute density per square foot.
Process engineering is the discipline that turns Terafab technology into reality, atom by atom. This role owns ion implantation processes across three distinct chip families: edge-inference processors, space-hardened data center AI chips for orbital satellites, and high-bandwidth memory. The engineer will develop and optimize dopant implantation, profile control, and stress engineering while balancing junction performance, thermal budget compatibility, defectivity, and integration constraints across radically different product requirements. This is a highly hands-on role requiring deep expertise in ion implantation while collaborating closely with diffusion/anneal, thin films, etch, CMP, metallization, photo, metrology, and integration teams in one of the most ambitious fab programs in the world.
Responsibilities: Develop and qualify high-current, medium-current, and low-energy ion implantation processes, including source/drain, substrate, channel, well, and halo implants for logic and memory devices
Optimize critical implant parameters: dopant species, energy, dose, tilt, rotation, beam current, and damage engineering to achieve precise junction profiles, sheet resistance, and leakage performance
Own ion implant processes end-to-end: from tool installation and qualification through recipe development, beam setup optimization, particle and metal contamination control, and HVM handoff
Qualify implant tools from installation to production readiness, including beam calibration, uniformity, angle control, wafer charging management, and chamber matching
Analyze implant process, dopant distribution, and device performance using first-principles, physics-based approaches to understand implantation mechanisms, amorphization, channeling, and transient enhanced diffusion (TED) interactions
Lead root cause analysis for profile shifts, device param variation, and yield issues; establish inline metrology and control strategies; and drive systematic yield improvement
Support 24/7 manufacturing operations through rotations, on-call availability, and rapid response to critical production issues
Drive development of next-generation implantation techniques, including plasma doping (PLAD) and advanced damage/activation strategies for sub-2nm nodes and specialized applications
Requirements: Degree in Chemical Engineering, Materials Science, Electrical Engineering, Physics, or equivalent experience
5+ years of hands-on ion implantation process and integration engineering experience in a semiconductor fab, with strong focus on advanced logic or memory technologies
Deep expertise in ion implanters
Proven track record establishing Process of Record (POR) for critical implant steps at advanced nodes
Proficiency with implant metrology
Strong DOE skills and statistical analysis capability
Excellent collaboration skills with the ability to work proactively across diffusion/anneal, thin films, integration, and equipment engineering teams
Passion for ambitious, vertically integrated semiconductor programs and building high-performance compute technologies