Master Thesis - Novel RF Transistor Technologies for (Sub-)Milllimeter Wavelength Power Amplifiers

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Future wireless communication systems push towards higher frequencies to achieve higher data rates. A critical component of such systems is the transmit power amplifier, which must provide the transmit power at frequencies around 300 GHz. High-electron-mobility transistors (HEMTs) based on InGaAs are well suited to implement power amplifiers at 300 GHz. Those HEMTs are currently limited in the operating bias voltage, which consequently restricts the achievable output power. Fraunhofer IAF investigates new innovative InGaAs HEMT devices with improved voltage breakdown and excellent high frequency properties. The focus of this thesis will be the characterization and modeling of HEMTs that utilize a backside field plate to increase the bias voltage and subsequently the outpout power at 300 GHz.